Product Specifications

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Product Description

Overview

Quick Details

Place of Origin: China

Brand Name: OEM

Model Number: 10*10mm

Cell Efficiency: 40%

Thickness of front contact: ~6μm.

Thickness of back contact: ~4μm

Base Material: GalnP2/InGaAs/

Polarity: N on P

Cell Thickness: 175,20μm

Active Cell Area: 25 mm2

Chip Size: 5.1X6 mm2,0.01mm2

AR coating: TiO,JAl2O3

Warranty: Other

Packaging & Delivery

GalnP2/InGaAs triple junction solar cell with stability performance GaAs

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave

integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium

arsenide, aluminum gallium arsenide and others.

40% Concertrator Triple Junction Solar Cell

ü 40% Concertrator Triple Junction Solar Cell

ü GalnP2/InGaAs/Ge triple junction solar cell

ü Multilayer antireflective coating provides low reflectance over a wavelength range of0.3 to 1.8

ü Special coating design for OSR

ü Stable performance from 500 to 1000 suns

ü Optimized grid design, higher Pmax

ü Double sided welding

ü Size can be customized

ü To adapt to the harsh climate

ü V Capacity : 3Mw/month

Design and mechanical data

Typical electrical data

Measurement condition: AM1.5G,T= 25°C,50W/cm2 (x500),100W/cm2 (X1000)

Supply Ability

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Packaging and Shipping

Lead time

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Port

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Packaging details

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